March 12, 2007, Peabody, MA — A new thermal field emission analytical SEM from JEOL, the JSM-7001F, acquires high resolution micrographs at up to 1,000,000X for applications ranging from semiconductor, metals, minerals, materials, and ceramics, to non-conductive biological samples. The JSM-7001F features a unique in lens field emission gun that delivers more than 200 nA of... Read more
February 13, 2007, Peabody, MA – The high spatial resolution and flexibility of the JEOL Beam Tracer allows this new failure analysis tool to precisely locate and mark defect sites in multi-layer semiconductor devices. The Beam Tracer images marginal and failed interconnects and junctions through several complex layers. It allows measurement of individual transistors, performs... Read more
November 28, 2006 (Peabody, Mass.) — JEOL USA Inc. today announced that the DART™ (Direct Analysis in Real Time) technology for open-air mass spectrometry has been awarded U.S. Patent No. 7,112,785 by the U.S. Patent and Trademark office. The patent covers the method of ionization of the DART process. This is the second U.S. patent... Read more
November 9, 2006 (Peabody, Mass.) — JEOL USA announced that it will deliver the first of its new 120kV Transmission Electron Microscopes (TEMs) to Georgia Institute of Technology in January 2007. The JEOL JEM-1400 is a versatile, compact TEM, optimized for biological, polymer, and materials research and designed for Cryo-EM applications. The TEM will be... Read more
November 9, 2006 (Peabody, Mass.) — JEOL USA introduces the latest in imaging technology and microscopy automation with its new 120 kV high resolution Transmission Electron Microscope (TEM). This versatile instrument, the model JEM-1400, is optimized for biological, polymer, and materials research, combining both imaging and cryomicroscopy excellence. High contrast resolution is assured at 0.38nm... Read more